Synchronized Parallel Tile Computation for Large Area Lithography Simulation

ABSTRACT

Examples of synchronized parallel tile computation techniques for large area lithography simulation are disclosed herein for solving tile boundary issues. An exemplary method for integrated circuit (IC) fabrication comprises receiving an IC design layout, partitioning the IC design layout into a plurality of tiles, performing a simulated imaging process on the plurality of tiles, generating a modified IC design layout by combining final synchronized image values from the plurality of tiles, and providing the modified IC design layout for fabricating a mask. Performing the simulated imaging process comprises executing a plurality of imaging steps on each of the plurality of tiles. Executing each of the plurality of imaging steps comprises synchronizing image values from the plurality of tiles via data exchange between neighboring tiles.

This is a divisional application of and claims priority to U.S. patentapplication Ser. No. 15/867,437, entitled “Synchronized Parallel TileComputation for Large Area Lithography Simulation” and filed Jan. 10,2018, which is a non-provisional application of and claims priority toU.S. Provisional Patent Application Ser. No. 62/586,621, entitled“Synchronized Parallel Tile Computation for Large Area LithographySimulation” and filed Nov. 15, 2017, the entire disclosures of which arehereby incorporated by reference.

BACKGROUND

The semiconductor device industry has experienced rapid growth. In thecourse of semiconductor device evolution, the functional density hasgenerally increased while feature size has decreased. This scaling downprocess provides benefits by increasing production efficiency andlowering associated costs. Such scaling down has also increased thecomplexity of design and manufacturing these devices.

For example, one technique applied to the design and manufacturing ofsemiconductor devices is optical proximity correction (OPC). OPCincludes applying features that alter the photomask design layout of asemiconductor device in order to compensate for distortions, forexample, caused by the diffraction of light through subwavelengthfeatures on the photomask, the bandlimiting effect of a lens system, andthe chemical process of the photoresist that occur during lithography.Thus, OPC allows circuit patterns on a substrate to conform more closelyto an integrated circuit (IC) designer's layout for the semiconductordevice. As process nodes shrink, OPC processes and the resultantpatterns become more complex. There is also inverse lithographytechnology (ILT), which may produce complex, curvilinear patterns on aphotomask or reticle, rather than Manhattan patterns that are formed viaOPC on conventional photomasks or reticles. Unfortunately, even thoughexisting OPC and ILT techniques have been generally adequate for theirintended purposes, they have not been entirely satisfactory in allrespects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a block diagram of an embodiment of an integrated circuit (IC)manufacturing system according to various embodiments of the presentdisclosure.

FIG. 2 is a schematic view of a lithography system according to variousembodiments of the present disclosure.

FIG. 3 is a block diagram of a mask design system according to variousembodiments of the present disclosure.

FIG. 4 is a flowchart of a computational lithography method according tovarious embodiments of the present disclosure.

FIG. 5A is a diagram illustrating a uniform tiling scheme according tovarious embodiments of the present disclosure.

FIG. 5B is a diagram illustrating a staggered tiling scheme according tovarious embodiments of the present disclosure.

FIG. 5C is a diagram illustrating an adaptive tiling scheme according tovarious embodiments of the present disclosure.

FIG. 6 is a schematic diagram showing a computation scheme according tovarious embodiments of the present disclosure.

FIG. 7 is a schematic diagram illustrating how transition regions ofneighboring tiles overlap according to various embodiments of thepresent disclosure.

FIG. 8 is a schematic diagram illustrating part of a synchronizedparallel tile computation scheme according to various embodiments of thepresent disclosure.

FIG. 9 is a flowchart of a computational lithography method according tovarious embodiments of the present disclosure.

FIG. 10 is a flowchart of another computational lithography methodaccording to various embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the present disclosure.Specific examples of components and arrangements are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of afirst feature “over” or “on” a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As semiconductor fabrication progresses to increasingly small technologynodes, various techniques have been employed to help achieve the smalldevice sizes. One example of such technique is computationallithography, which aims to simulate the lithography process beforeactually fabricating a photomask. The simulation helps optimize patterngeometries on the photomask. With increasingly small technology nodes,more devices and features are packed into the same area of IC designlayout. Shorter light wavelengths are used in lithography processes tohelp realize smaller technology nodes. Therefore, in applications ofcomputational lithography, such as Optical Proximity Correction (OPC)and Inverse Lithography Technology (ILT), a large area of IC layout isdivided into small tiles for distributed processing. Distributedprocessing helps lithography simulation applications due to limitedphysical memory associated with a single central processing unit (CPU).Lithography simulation may be performed more effectively and moreefficiently with parallel processing by multiple CPUs located onmultiple machines.

Conventional parallel computing solutions and tiling schemes frequentlyresult in low simulation area efficiency. Further, special care isrequired to prevent inconsistent computational results at the tileboundaries, which cause difficulties when the processed tiles are thenstitched back together to form a complete solution for the whole masklayout. For example, in some mask correction algorithms, such as OPC andILT, an iterative solver is applied independently within each tile in anordered fashion. The information flow between neighboring tiles goesone-way only: each tile is initialized (near its boundary) based on thesolutions of its predecessors, and the tile passes on its own results(near its boundary) to its successors. If a particular tile is allowedto change a mask solution from its predecessors, in general this willlead to boundary inconsistencies. Boundary stitching is done at the veryend after solutions have already diverged, and special techniques arerequired to correct boundary inconsistencies. Alternatively, a tile canfreeze the solution from its predecessors, but this will limit thedegrees of freedom the tile has in computing an optimized mask pattern.Moreover, in order to simulate a tile accurately, it is useful tosimulate a larger surrounding region (sometimes referred to as a halo).In certain conventional OPC and ILT practices, the halo can be quitelarge (and frequently larger than would seem to be necessary based onmodel considerations), which results in low simulation area efficiency.Overall, conventional methods and practices are expected to beinsufficient, especially for developing most advanced nodes (5 nm andbeyond).

The present disclosure provides a new parallel computing architecturefor large area lithography simulation that naturally solves tileboundary issues by preventing them from happening in an intrinsicmanner. Specifically, a manager machine is used to execute overallcomputing algorithms while multiple worker machines are used in localcomputation of different tiles. The workers exchange their intermediatecomputational results with neighboring tiles, which are appropriatelystitched together. Within each iteration of an iterative process, suchas OPC and ILT, such an exchange of information can occur at every imagesimulation step in order to synchronize the simulation results. Thecontinuous information exchange intrinsically avoids the tile boundarystitching issues that arise in conventional practices.

The parallel computing architecture disclosed herein treats anintegrated circuit (IC) design layout (or a large area thereof that islarger than usual tiles) as a whole. The computing architecture stilluses an underlying tiling scheme but smoothly and symmetrically combinessimulation results from each tile into a single larger simulation. Alithography simulation process may have multiple steps that produceintermediate results, such as optical images, various resist images, andwafer contours. The disclosed computing architecture stages thecomputation in such a manner that the intermediate results can besynchronized before simulation proceeds to the next step, therebyeffectively eliminating tile boundary inconsistencies at each step.Functionally, such synchronization is equivalent to performing OPC/ILTon the single, larger area of IC design layout. Therefore, the presentdisclosure provides an effective and efficient solution to lithographysimulation for a large area of IC design layout. Such a solution can beused for lithography simulation and computation where an iterativesolver (e.g., OPC and ILT) is used in a parallel computing environment.The various embodiments of the present disclosure are discussed in moredetail with reference to FIGS. 1-10.

FIG. 1 is a block diagram of an IC manufacturing system 10, along withan IC manufacturing flow associated with IC manufacturing system 10,according to various embodiments of the present disclosure. ICmanufacturing system 10 includes a plurality of entities—such as adesign house (or design team, or design shop) 15, a mask house 20, andan IC manufacturer 25 (e.g., an IC fab)—that interact with one anotherin design, development, and manufacturing cycles and/or services relatedto manufacturing an IC device 30. The entities are connected by acommunication network, which may be a single network or a variety ofdifferent networks, such as an intranet and/or Internet, and may includewired and/or wireless communication channels. Each entity may interactwith other entities and may provide services to and/or receive servicesfrom the other entities. One or more of design house 15, mask house 20,and IC manufacturer 25 may be owned by a single large company, and mayeven coexist in a common facility and use common resources. It should beunderstood that figures herein including FIG. 1 have been simplified inthe interest of clarity. Therefore, the figures may include additionalfeatures, processes, and/or operations that exist before, between,and/or after those explicitly shown.

Design house 15 generates an IC design layout 35 (also referred to as anIC design pattern). IC design layout 35 includes various circuitfeatures (represented by geometrical shapes) designed for an IC productbased on specifications of the IC product to be manufactured. Thecircuit features correspond to geometrical features formed in variousmaterial layers (such as metal layers, dielectric layers, and/orsemiconductor layers) that combine to form IC features (components) ofthe IC product, such as IC device 30. For example, a portion of ICdesign layout 35 includes various IC features to be formed in asubstrate (e.g., a silicon substrate) and/or in various material layersdisposed on the substrate. The various IC features can include an activeregion, a gate feature (e.g., a gate dielectric and/or a gateelectrode), a source/drain feature, an interconnection feature, abonding pad feature, other IC feature, or combinations thereof. In someexamples, assist features are inserted into IC design layout 35 toprovide imaging effects, process enhancements, and/or identificationinformation. A geometry proximity correction (GPC) process, similar toan optical proximity correction (OPC) process used for optimizing maskpatterns (mask layouts), may generate the assist features based onenvironmental impacts associated with IC fabrication, including etchingloading effects, patterning loading effects, and/or chemical mechanicalpolishing (CMP) process effects.

Design house 15 implements a proper design procedure to form IC designlayout 35. The design procedure may include logic design, physicaldesign, place and route, or combinations thereof. IC design layout 35 ispresented in one or more data files having information of the circuitfeatures (geometrical patterns). In an example, IC design layout 35 isexpressed in a Graphic Database System file format (such as GDS orGDSII). In another example, IC design layout 35 is expressed in anothersuitable file format, such as Open Artwork System Interchange Standardfile format (such as OASIS or OAS).

Mask house 20 uses IC design layout 35 to manufacture masks, which areused for fabricating various layers of IC device 30 according to ICdesign layout 35. A mask (sometimes referred to as a photomask orreticle) is a patterned substrate used in a lithography process topattern a wafer, such as a semiconductor wafer. Mask house 20 performsmask data preparation 40, where IC design layout 35 is translated into aform that may be written by a mask writer to generate a mask. Forexample, IC design layout 35 is translated into machine readableinstructions for a mask writer, such as an electron-beam (e-beam)writer. Mask data preparation 40 generates a mask pattern (mask layout)that corresponds with a target pattern defined by the design layout 35.The mask pattern is generated by fracturing the target pattern of ICdesign layout 35 into a plurality of mask features (mask regions)suitable for a mask-making lithography process, such as an e-beamlithography process. The fracturing process may be implemented accordingto various factors, such as IC feature geometry, pattern densitydifferences, and/or critical dimension (CD) differences, and the maskfeatures are defined based on methods implemented by the mask writer forprinting mask patterns.

In some examples, where an e-beam writer uses a variable-shaped beam(VSB) method for printing mask patterns, a mask pattern may be generatedby fracturing IC design layout 35 into polygons (such as rectangles ortrapezoids). A corresponding mask shot map may include exposure shotinformation for each polygon. For example, at least one correspondingexposure shot, including an exposure dose, an exposure time, and/or anexposure shape, is defined for each polygon.

In some examples, where an e-beam writer uses a character projection(CP) method for printing mask patterns, a mask pattern may be generatedby fracturing IC design layout 35 into characters (typicallyrepresenting complex patterns) that correspond with a stencil used bythe e-beam writer. A corresponding mask shot map may include exposureshot information for each character. For example, at least onecorresponding exposure shot, including an exposure dose, an exposuretime, and/or an exposure shape, is defined for each character. In suchexamples, any portions of fractured IC design layout 35 that do notmatch characters in the stencil may be printed using the VSB method.

Mask data preparation 40 can include various processes for optimizingthe mask pattern, such that a final pattern formed on a wafer (oftenreferred to as a final wafer feature) by a lithography process using amask fabricated from the mask pattern exhibits enhanced resolution andprecision. For example, mask data preparation 40 includes OPC 42, whichuses lithography enhancement techniques to compensate for imagedistortions and errors, such as those that arise from diffraction,interference, and/or other process effects. OPC 42 can add assistfeatures, such as scattering bars, serifs, and/or hammerheads, to themask pattern according to optical models or optical rules in order toenhance resolution and precision of a final pattern on a wafer. In someexamples, the assist features can compensate for line width differencesthat arise from different densities of surrounding geometries. In someexamples, the assist features can prevent line end shortening and/orline end rounding. OPC 42 may further correct e-beam proximity effectsand/or perform other optimization features.

Although not shown in FIG. 1, one technique that may be used inconjunction with OPC is inverse lithography technology (ILT), whichcomputes a mask pattern using the entire area of a design rather thanjust its edges. While OPC may be restricted to Manhattan or otherwisesimple manipulation of the edges of a photomask, ILT considers a muchricher representation of the mask, for example, as a pixelated image.Commonly, ILT includes a process to feed an error (the differencebetween a simulated wafer pattern and a designer's layout) back into thesimulation in “reverse” order (analogous to so-called backpropagation inmachine learning) to compute a gradient, which (or some function of it)is then fed into the iterative correction of the mask. While ILT may insome cases produce unintuitive mask patterns, ILT may be used tofabricate masks having high fidelity and/or substantially improveddepth-of-focus and exposure latitude, thereby enabling printing ofgeometric patterns that may otherwise be unattainable. In someembodiments, an ILT process may be referred to as a type of model-basedmask correction process.

In some examples, mask data preparation 40 may use a mask rule check(MRC) process to check the mask pattern after undergoing an OPC process,where the MRC process uses a set of mask creation rules. The maskcreation rules can define geometric restrictions and/or connectivityrestrictions to compensate for variations in IC manufacturing processes.

In some examples, mask data preparation 40 can include a lithographyprocess check (LPC) 44, which simulates wafer making processes that willbe implemented by IC manufacturer 25 to fabricate IC device 30. In someexamples, based on a generated mask pattern, LPC 44 simulates a maskimage using various LPC models (or rules), which may be derived fromactual processing parameters implemented by IC fab 25. The processingparameters may include parameters associated with various processes ofthe IC manufacturing cycle, parameters associated with tools used formanufacturing IC device 30, and/or other aspects of the manufacturingprocess. LPC 44 may take into account various factors, such as imagecontrast, depth of focus (“DOF”), mask error sensitivity or Mask ErrorEnhancement Factor (“MEEF”), other suitable factors, or combinationsthereof. After a simulated device has been created by LPC 44, if thesimulated device is not close enough in shape to satisfy pre-set designrules, certain steps in mask data preparation 40, such as OPC 42 andMRC, may be repeated to further refine the IC design layout. It shouldbe understood that mask data preparation 40 has been simplified in theinterest of clarity, and mask data preparation 40 can include additionalfeatures, processes, and/or operations for modifying the IC designlayout to compensate for limitations in lithographic processes used byIC fab 25.

In addition to performing mask data preparation 40, mask house 20 alsoperforms mask fabrication 45, where a mask (e.g., mask 222 describedbelow in FIG. 2) is fabricated according to the mask pattern generatedby mask data preparation 40. In some examples, the mask pattern ismodified during mask fabrication 45 to comply with a particular maskwriter and/or mask manufacturer. During mask fabrication 45, a maskmaking process is implemented that fabricates a mask based on the maskpattern (mask layout). A mask may include a mask substrate and apatterned mask layer, where the patterned mask layer includes a final(real) mask pattern. The final mask feature, such as a mask contour,corresponds with the mask pattern (which in turn corresponds with thetarget pattern provided by IC design layout 35).

In some examples, the mask is a binary mask. For example, an opaquematerial layer (such as chromium) may be formed over a transparent masksubstrate (such as a fused quartz substrate or calcium fluoride (CaF₂)),and the opaque material layer may be patterned based on the mask patternto form a mask having opaque regions and transparent regions. In someexamples, the mask is a phase shift mask (PSM) that can enhance imagingresolution and quality, such as an attenuated PSM or alternating PSM.For example, a phase shifting material layer (such as molybdenumsilicide (MoSi) or silicon oxide (SiO₂)) may be formed over atransparent mask substrate (such as a fused quartz substrate or calciumfluoride (CaF₂)), and the phase shifting material layer may be patternedto form a mask having partially transmitting, phase shifting regions andtransmitting regions that form the mask pattern. In another example, thephase shifting material layer is a portion of the transparent masksubstrate, such that the mask pattern is formed in the transparent masksubstrate.

In some examples, the mask is an extreme ultraviolet (EUV) mask. Forexample, a reflective layer may be formed over a substrate, anabsorption layer may be formed over the reflective layer, and theabsorption layer (such as a tantalum boron nitride (TaBN)) may bepatterned to form a mask having reflective regions that form the maskpattern. The substrate may include a low thermal expansion material(LTEM), such as fused quartz, TiO₂ doped SiO₂, or other suitable lowthermal expansion materials. The reflective layer may include multiplelayers formed on the substrate, where the multiple layers include aplurality of film pairs, such as molybdenum-silicide (Mo/Si) film pairs,molybdenum-beryllium (Mo/Be) film pairs, or other suitable material filmpairs configured for reflecting EUV radiation (light). The EUV mask mayfurther include a capping layer (such as ruthenium (Ru)) disposedbetween the reflective layer and the absorption layer. Alternatively,another reflective layer is formed over the reflective layer andpatterned to form an EUV phase shift mask.

Mask fabrication 45 may use various lithography processes forfabricating a mask. For example, a mask making process may include alithography process, which involves forming a patterned energy-sensitiveresist layer on a mask material layer and transferring a pattern definedin the patterned resist layer to a mask patterning layer. The maskmaterial layer may be an absorption layer, a phase shifting materiallayer, an opaque material layer, a portion of a mask substrate, and/orother suitable mask material layer. In some examples, forming thepatterned energy-sensitive resist layer includes forming anenergy-sensitive resist layer on the mask material layer (e.g., via spincoating), performing a charged particle beam exposure process, andperforming a developing process. The charged particle beam exposureprocess directly “writes” a pattern into the energy-sensitive resistlayer using a charged particle beam, such as an electron beam or an ionbeam. Since the energy-sensitive resist layer is sensitive to chargedparticle beams, exposed portions of the energy-sensitive resist layerchemically change, and exposed (or non-exposed) portions of theenergy-sensitive resist layer are dissolved during the developingprocess depending on characteristics of the energy-sensitive resistlayer and characteristics of a developing solution used in thedeveloping process. After development, the patterned resist layerincludes a resist pattern that corresponds with the mask pattern. Theresist pattern is then transferred to the mask material layer by anysuitable process to form a final mask feature in the mask materiallayer. For example, the mask making process may include performing anetching process that removes portions of the mask material layer, wherethe etching process uses the patterned energy-sensitive resist layer asan etch mask during the etching process. After the etching process, alithography process may remove the patterned energy-sensitive resistlayer from the mask material layer, for example, using a resiststripping process.

IC manufacturer 25 (also referred to as IC fab 25), such as asemiconductor foundry, uses one or more masks fabricated by mask house20 to fabricate IC device 30. For example, a wafer making process mayuse a mask to fabricate a portion of IC device 30 on a wafer. In someexamples, IC manufacturer 25 performs a wafer making process numeroustimes using various masks to complete fabrication of IC device 30.

FIG. 2 is a schematic view of a lithography system 200, constructed inaccordance with some embodiments. For example, lithography system 200may be used by IC manufacturer 25 to fabricate IC device 30. Lithographysystem 200 is designed to expose a semiconductor wafer 202 by radiationor light 210. Semiconductor wafer 202 may be a silicon wafer or othertype of wafer used for fabricating IC device 30. Semiconductor wafer 202may include a resist layer 204, which is a material sensitive to light210. Lithography system 200 employs a radiation source to generate light210, such as extreme ultraviolet (EUV) light having a wavelength rangingbetween about 1 nm and about 100 nm. Lithography system 200 alsoincludes a mask stage 220 configured to secure a mask 222, which may befabricated by mask house 20. In some embodiments, mask stage 220includes an electrostatic chuck (e-chuck) to secure mask 222. As shownin FIG. 2, when lithography system 200 is a EUV lithography system, mask222 is a reflective mask. Lithography system 200 may also include aprojection optics box (POB) 230 for imaging patterns on mask 222 tosemiconductor substrate 210. The POB 230 includes reflective optics fordirecting light 40 from mask 222, carrying the image of patterns definedon mask 222. Although not shown in FIG. 2, similar principles may beused to fabricate IC device 30 using deep UV (DUV) light having awavelength of about 193 nm or greater.

Depending on the IC fabrication stage, semiconductor wafer 202 caninclude various material layers and/or IC features (e.g., dopedfeatures, gate features, source/drain features, and/or interconnectfeatures) when undergoing the wafer making process. Patterns may beformed in resist layer 204 and transferred to a wafer material layer,which may be a dielectric layer, a semiconductor layer, a conductivelayer, a portion of a substrate, and/or other suitable wafer materiallayer. Forming a patterned resist layer in semiconductor wafer 202 caninclude forming resist layer 204 on a substrate (e.g., by spin coating),performing a pre-exposure baking process, performing an exposure processusing mask 222 (including mask alignment), performing a post-exposurebaking process, and performing a developing process. During the exposureprocess, resist layer 204 is exposed to light 210 (such as ultraviolet(UV) light, deep UV (DUV) light, or extreme UV (EUV) light). Mask 222blocks, transmits, or reflects light 210 to resist layer 204 dependingon a final mask feature of the mask and/or mask type (e.g., binary mask,phase shift mask, or EUV mask), such that an image is projected ontoresist layer 204 that corresponds with the final mask feature. Thisimage is referred to herein as a projected wafer image 50. Since resistlayer 204 is sensitive to light 210, exposed portions of resist layer204 chemically change, and exposed (or non-exposed) portions of resistlayer 204 are dissolved during the developing process depending oncharacteristics of resist layer 204 and characteristics of a developingsolution used in the developing process. After development, resist layer204 includes a resist pattern that corresponds with the final maskfeature.

Referring back to FIG. 1, an after development inspection (ADI) 55 maybe performed to capture information associated with the resist pattern,such as critical dimension uniformity (CDU) information, overlayinformation, and/or defect information. Ideally, final wafer feature 60matches the target pattern defined by IC design layout 35. However, dueto various factors associated with the mask making process and the wafermaking process, a final mask feature formed on a mask often differs froma mask pattern (generated from the target pattern defined by IC designlayout 35), causing final wafer feature 60 formed on the wafer to differfrom a target pattern. For example, mask writing blur (such as e-beamwriting blur) and/or other mask-making factors may cause variancesbetween the final mask feature and the mask pattern, which in turncauses variances between final wafer feature 60 and the target pattern.Various factors associated with the wafer making process (such as resistblur, mask diffraction, projection imaging resolution, acid diffusion,etching bias, and/or other wafer making factors) further exacerbatevariances between final wafer feature 60 and the target pattern.

To minimize or eliminate such variances, computational lithography helpsenhance and optimize the mask making process and the wafer makingprocess. Computational lithography comprises a set of techniques thatimplement computationally-intensive physical models and/or empiricalmodels to predict and optimize IC feature patterning. The physicalmodels and/or the empirical models are based on phenomena that affectlithographic process results, such as imaging effects (e.g., diffractionand/or interference) and/or resist chemistry. IC manufacturing system 10can implement such techniques to generate optimal settings for the maskmaking process (often referred to as mask optimization) and/or the wafermaking process (often referred to as source optimization, wave frontengineering, and/or target optimization). For example, IC manufacturingsystem 10 can implement OPC, MRC, LPC, and/or ILT techniques to generatea shape for a final mask feature of a mask fabricated by mask house 20that optimizes projected wafer image 50 so that projected wafer image 50may correspond as closely as possible with the target pattern of ICdesign layout 35.

FIG. 3 is a block diagram of a mask design system 300 according tovarious embodiments of the present disclosure. Mask design system 300may be part of mask house 20 shown in FIG. 1, and more specifically, maybe operable to perform the functionality described in association withmask data preparation 40 of FIG. 1. In operation, mask design system 300is configured to manipulate IC design layout 35 according to a varietyof pre-set conditions (e.g., design rules, IC fabrication capability,and limitations) before it is transferred to mask 222 by maskfabrication 45. For example, mask data preparation 40, including OPC,ILT, MRC, and/or LPC, may be implemented as software instructionsexecuting on mask design system 300. In such an embodiment, mask designsystem 300 receives an IC design layout 35 (e.g., as a GDSII file) fromdesign house 20. After mask data preparation 40 is complete, mask designsystem 300 provides a modified IC design layout 37 to mask fabrication45 for fabricating mask 222.

Mask design system 300 may include one or more computer devices ormachines. As discussed above, with increasingly small technology nodes,more devices and features are packed into the same area of an IC designlayout. Therefore, in applications of computational lithography, such asOPC and ILT, a large area of IC layout is divided into small tiles fordistributed processing. Distributed processing helps lithographysimulation due to limited physical memory associated with a single CPU.Lithography simulation may be performed more quickly and moreefficiently with parallel processing by multiple CPUs located onmultiple machines. In an embodiment, mask design system 300 includes aplurality of machines including a manager machine 310 and multipleworker machines such as 320 and 330. Each machine is an informationhandling system such as a computer, server, workstation, or othersuitable device. The plurality of machines may reside at the samelocation (e.g., as units of a larger mask design system) or at differentlocations, and may interact with one another through communicationmeans.

Each manager or worker machine includes a processor 312, a system memory314, a mass storage device 316, and a communication module 318.Processor 312 may include one or more CPUs. System memory 314 providesprocessor 312 with non-transitory, computer-readable storage tofacilitate execution of computer instructions by processor 312. Examplesof system memory may include random access memory (RAM) devices such asdynamic RAM (DRAM), synchronous DRAM (SDRAM), solid state memorydevices, and/or a variety of other memory devices known in the art.Computer programs, instructions, and data are stored on mass storagedevice 316. Examples of mass storage devices may include hard discs,optical disks, magneto-optical discs, solid-state storage devices,and/or a variety other mass storage devices. Communication module 318 isoperable to communicate information such as IC design layout files withother components in mask design system 300 or in IC manufacturing system10, such as design house 20. Examples of communication modules mayinclude Ethernet cards, 802.11 WiFi devices, cellular data radios,and/or other suitable devices.

The new parallel computing architecture shown in FIG. 3 may naturallysolve tile boundary issues for large area lithography simulation bypreventing tile boundary inconsistencies from happening in an intrinsicmanner. In an embodiment, manager machine 310 is used to execute overallcomputing algorithms while multiple worker machines including 320 and330 are used in local computation of different tiles. Worker machinesexchange their intermediate computational results with neighboringtiles, which are appropriately stitched together. Within each iterationof an iterative process, such as OPC and ILT, such an exchange ofinformation can occur at every image simulation step to synchronizesimulation results. The continuous information exchange intrinsicallyavoids the tile boundary stitching issues that arise in conventionalpractices. More details of such synchronized parallel tile computationschemes are described in regard to FIG. 4.

FIG. 4 is a flowchart of a computational lithography method 400according to various embodiments of the present disclosure.Computational lithography method 400 may be implemented by ICmanufacturing system 10 of FIG. 1, where design house 15, mask house 20,and/or IC manufacturer 25 can perform (or collaborate to perform) method400 to manufacture IC device 30. For example, method 400 may beimplemented by mask house 20 as a computational lithography process,which uses lithography enhancement techniques to compensate for imagedistortions and errors, such as those arising from diffraction,interference, or other process effects. Method 400 may be jointlyimplemented by manager machine 310 and worker machines of mask designsystem 300. FIG. 4 has been simplified for the sake of clarity. It isunderstood that additional steps can be provided before, during, andafter method 400 and that some of the steps described can be replaced oreliminated for other embodiments of method 400. Unless otherwise noted,steps in method 400 may be performed in any order includingconcurrently.

In step 405, a manager machine (e.g., manager machine 310) receives anIC design layout, such as IC design layout 35. The IC design layout ispresented in one or more data files (e.g., GDSII file format) havinginformation of a target pattern. The IC design layout may be an originaldesign layout or a version processed therefrom. The IC design layoutincludes various IC features (represented by geometrical shapes)designed for an IC product to be manufactured, for example, by ICmanufacturing system 10. The IC features may be formed in variousmaterial layers (e.g., metal layers, dielectric layers, and/orsemiconductor layers) that combine to form IC features of the ICproduct. In some examples, the IC features specify mask features on amask (e.g., mask 222) for selectively exposing a resist layer (e.g.,resist layer 204) to radiation energy (e.g., light 210). The IC designlayout may contain a relatively large area that warrants partition intosmaller tiles for distributed processing. Such an area may have anysuitable shape and/or size. The size of such an area may depend onvarious factors such as computation capabilities of the manager machine.For example, a length or a width of the IC design layout may range from50 micrometers (μm) to 1 millimeter (mm). In some embodiments, the ICdesign layout include an area of about 200×200 square micrometers(μm{circumflex over ( )}2), 100×300 μm{circumflex over ( )}2, 28×32μm{circumflex over ( )}2, etc.

In step 410, the manager machine divides or partitions the IC designlayout (or an area thereof) into a plurality of smaller tiles. In someembodiments, an IC design layout comprises a region of interest and asurrounding freeze region, and the region of interest is partitionedinto tiles. Each tile represents a job unit, which is a smaller area ofthe IC design layout, to be assigned to a worker machine for parallelcomputing. Each tile may have any suitable shape (e.g., rectangle orsquare) and/or size. For example, a large area of design layout (e.g.,200×200 μm{circumflex over ( )}2) may be partitioned by a managermachine into a number of tiles (e.g., 16 tiles each with a size of 50×50μm{circumflex over ( )}2). In terms of relative position within the ICdesign layout, each tile may be defined or identified by the coordinatesof its four corners. In terms of image content, each tile may have aplurality of pixels (or points or dots) with image values, as furtherdescribed below with respect to FIG. 6. After partitioning, each tile isassigned to a worker machine (e.g., worker machine 320 or 330) that willbe used to support local calculations for the manager machine. Moreover,the manager machine sends to each worker machine message deliveryinstructions defining which points or pixels go to which of the otherworker machines interacting with it, thereby enabling the workermachines to exchange information with other worker machines in order tosynchronize their simulation results. Note that, if an IC design layoutis too big for one manager machine to compute, multiple manager machinesmay be used to handle the computation load, each interacting with aplurality of worker machines.

In the present disclosure, an IC design layout (or an area thereof) maybe partitioned into tiles (this process is sometimes referred to as“tiling”) in flexible ways depending on the application. As examples,FIG. 5A is a diagram illustrating a uniform tiling scheme 500, FIG. 5Bis a diagram illustrating a staggered tiling scheme 550, and FIG. 5C isa diagram illustrating an adaptive tiling scheme 580. In uniform tilingscheme 500, rectangular tiles have equal sizes and are tightly packed(with or without overlapping areas). FIG. 5A shows nine rectangulartiles (four corner tiles represented by solid-line rectangles and othertiles represented by broken-line rectangles), where each tile partiallyoverlaps its neighboring tiles. Details of different regions associatedwith each tile are described with respect to FIG. 6. In staggered tilingscheme 550, rectangular tiles may have equal or different sizes, and mayor may not overlap with one another in certain areas of the layout. FIG.5B shows five rectangular tiles, two represented by solid-linerectangles and three represented by broken-line rectangles. In someembodiments, staggered tiling scheme 550 is used to simulatenon-standard (non-rectangular) regions as efficiently as possible (e.g.,by not simulating certain unnecessary regions). In adaptive tilingscheme 580, tiles are not uniformly distributed in the layout; rather,the shape, size, and location of tiles may be adapted based on ICfeatures in the layout. As shown in FIG. 5, if needed, certain tiles maybe further divided into smaller areas (called “subtiles”). One advantageof adaptive tiling scheme 580 over uniform tiling scheme 500 is theoption to omit some of the subtiles from the computation. For exampleinstead of computing one 16×16 μm{circumflex over ( )}2 tile, one maycompute two or three 8×8 μm{circumflex over ( )}2 subtiles (and omittingtwo or one), which may improve efficiency. It should be understood thatother tiling schemes, though not shown in FIGS. 5A-5C, are alsocontemplated within the scope of the present disclosure. Moreover, itshould be understood that, since a tile represents a job unit assignedto a worker machine for computation, the concept of tile may be capturedor otherwise expressed herein by other terms such as a simulation orbounding box. The simulation box and its associated regions aredescribed further below with respect to FIG. 7.

In step 420, the worker machines prepare or pre-process their respectiveportions of the IC design layout for simulation. For example, since eachpartitioned tile (or simulation box) may contain geometry content, eachworker machine may receive geometry content in its respective tile (orsimulation box) and then convert the geometry content to a pixelatedrepresentation, if desired. Although FIG. 4 shows pre-processing done bythe worker machines, tiles may alternatively be pre-processed by themanager machine and then sent to the worker machines.

In some embodiments, the pre-processing may include steps such asrasterization and/or anti-aliasing filtering. Rasterization orpixelation refers to the task of taking an image described in a vectorgraphics format (e.g., including the polygonal shapes of the maskpatterns) and converting it into a raster image that comprises pixels ordots. In the rasterization process, a high resolution rasterized imagemay be obtained. However, such a high resolution image may sometimes beunnecessary, in which case the high resolution rasterized mask isdown-sampled to a lower resolution representation, which might includeanti-aliasing filtering to limit the impact of aliasing on the lowerresolution grid.

In some embodiments, each pre-processed tile comprises a plurality ofpixels (or points or dots), such as a pixel 611 (discussed in moredetails below with respect to FIG. 6). Each pixel may represent a verysmall area of image (e.g., a square with an area of 0.1×0.1nm{circumflex over ( )}2, 1×1 nm nm{circumflex over ( )}2, 10×10nm{circumflex over ( )}2, 50×50 nm{circumflex over ( )}2, etc.). Eachpixel has a set of coordinates (e.g., X-Y coordinates or polarcoordinates) that defines its relative position within the image. Eachpixel also has a pixel or image value. For example, a value of one maybe given to a pixel fully or partially covered by a shape, and a valueof zero may be given to a pixel not covered by any shape. In some cases,a weighted value between zero and one may also be given to a pixel if itis partially covered by a shape (e.g., value of 0.6 if 60% of the areain the pixel is covered by the shape). During computational lithography,changes in the image value of a pixel may signal edge movement ordisplacement of a geometric shape (e.g., a polygon edge) that covers thepixel. For example, edge displacement values or vertices may be derivedby comparing how image values of pixels in a tile have changed. In someembodiments (e.g., when OPC manipulates geometric shapes directlywithout deriving them from pixel values), each pre-processed tile maycomprise geometric shapes directly, and principles disclosed herein maywork similarly in such embodiments.

After step 420, method 400 may enter a simulated imaging process 430 tosimulate various stages of a lithography process. In some embodiments,simulated imaging process 430 is an iterative process, where eachiteration includes multiple steps. For example, as shown in FIG. 4, eachiteration of simulated imaging process 430 includes a mask update step432 and multiple imaging steps such as imaging step 434 and imaging step436. A modified design layout is generated at the end of each iteration.The iterations may repeat until a final modified design layout 450 isclose enough in shape to satisfy design rules.

In step 432, each worker machine updates its respective portion of theIC design layout from previous simulation results to get a new layout.As shown in FIG. 4, simulation results obtained from step 436 may beused by the same worker machine to update an IC design layout for thenext iteration. Step 432 may be skipped if simulation has not beenconducted yet (e.g., in the first iteration). For example, in the firstiteration, pixel values from an original IC design layout may be usedfor the next imaging step 434. Note that the calculation of mask updatefrom simulation may be an inverse problem and computed by OPC or ILT.

Moreover, in step 432, each worker passes the values at thepre-determined pixels to its designated neighbors (following the messagedelivery instructions generated in step 410) in order to facilitatetheir computation in the next imaging step 434. For example, a firstworker machine working on a first tile may deliver messages (sometimesdenoted in drawings as “msg”) to one or more second worker machinesworking on neighboring tiles. Messages are delivered according todelivery instructions, which are sent by the manager machine to theworker machines in step 410. The delivery instructions define whichpoints or pixels go to which of the other worker machines interactingwith it, thereby enabling the worker machines to exchange informationwith other worker machines in order to synchronize their simulationresults.

The plurality of imaging steps—including the first imaging step 434,intermediate imaging steps (not shown in FIG. 4), and the last imagingstep 436—represent how simulated imaging process 430 specificallysimulates various stages of a lithography process. A lithography processinvolves various stages or steps such as mask fabrication, diffractionof light through the mask, projection of light through the lens systemand onto the resist, resist exposure, post-exposure baking, development,etching, metal line formation, etc. Different images may be used orformed in the various stages of the lithography process, such as a maskimage, an aerial image or optical image, and a photoresist or resistimage. The stages (and images used therein) may be simulated in theforward order, e.g., for OPC, or additionally have the errors propagatedbackward in “reverse” order, e.g., for the computation of the gradientin ILT. In some embodiments, a standard forward lithography simulationmay be computed step by step (e.g., n steps as shown in FIG. 4), whereeach step starts with an image and results in another image. Examples ofimages generated in such steps include a mask near field, an aerialimage, and a resist image. Therefore, depending on the stage ofsimulation, an IC design layout being computed by simulated imagingprocess 430 may represent any of such images. Completion of these stepsgives one full cycle of the forward simulation.

In some embodiments of simulated imaging process 430, step 434 applies athin mask model to a processed mask layout, thereby generating a masknear field. The mask near field can be approximated by the thin maskmodel that assigns two different constant field values to areas occupiedor not occupied by patterns, respectively. An intermediate step (notlabeled in FIG. 4) applies an optical model to the mask near field,thereby generating an aerial image on the wafer. This step may also beviewed as performing an exposure simulation. Step 436 applies aphotoresist model to the aerial image to obtain a final photoresistimage on the wafer. This step may also be viewed as performing aphotoresist simulation. More stages of lithography may be simulated ifneeded.

In parallel lithography simulation, in order to simulate a tileaccurately, it is useful to simulate a larger surrounding region thatmay overlap with one or more neighboring tiles. As a result, for pixelslocated in the overlapping region, multiple pixel values may be computedfor the same pixel by different worker machines. Without propersynchronization, the multiple pixel values for the same pixel maydiffer, leading to tile boundary inconsistencies. If boundary stitchingis done at the very end of the simulation process, it may be too late tosolve boundary inconsistencies because computed solutions may havealready diverged significantly. In the present disclosure, to solve tileboundary inconsistencies and therefore improve the accuracy oflithography simulation, a worker machine may start each of a pluralityof image steps with averaging pixel values from the worker machineitself (e.g., the result of a previous imaging step) and pixel valuesdelivered from its tiling neighbors. In some embodiment, when computingthe updated pixel value of a pixel, every weight for averaging isnon-negative, and all contributing weights for the pixel sum up to one.Moreover, during each imaging step, each worker machine passes pixelvalues at the pre-determined pixels to its designated neighbors(following message delivery instructions generated in step 410) in orderto facilitate their computation in the next imaging step.

Computation principles are further illustrated in FIG. 6, which is aschematic diagram showing a computation scheme 600. In FIG. 6, a firsttile 610 is situated in the middle, with two neighboring tiles 620 and630 located on both sides of tile 610. Tiles 610, 620, and 630 may belocated anywhere on an IC design layout (e.g., any of the rows shown inFIG. 5A). Tile 610 may be labeled “tile i,” tile 620 “tile i−1,” andtile 630 “tile i+1,” where i represents a number of the current tile.Tile 610 can have additional neighboring tiles in both the X-directionand Y-direction (for example, center tile in FIG. 5A has eightneighboring tiles), but for the sake of simplicity, they are not shownin FIG. 6. As described above, each of tiles 610, 620, and 630 comprisesa plurality of pixels, and each pixel has a pixel value to be updated bysimulated imaging process 430. For example, tile 610 includes a pixel611 whose value may be changed by the execution of imaging steps 434 and436.

In some embodiments, averaging pixel values of the same pixel from aworker machine itself and from its tiling neighbors is realized by theuse of weight functions, which are designed for and assigned to eachtile. As shown in FIG. 6, weight functions 612, 622, and 632 aredesigned for and assigned to tiles 610, 620, and 630, respectively.Weight functions 612, 622, and 632 are plotted along the X-directionbecause they are used to combine pixel values from tiles that are“neighbors” in the X-direction. Similar weight functions may be designedto combine pixel values from tiles that are “neighbors” in theY-direction (e.g., from tile 610, upper tile, and lower tile which arenot shown in FIG. 6). In some embodiments, weight functions 612, 622,and 632 are the same (e.g., if tiles 610, 620, and 630 have the samewidth in the X-direction). But weight functions 612, 622, and 632 mayvary if needed (e.g., if tiles 610, 620, and 630 have different widthsin the X-direction, or if one of tiles 610, 620, and 630 is furtherdivided into subtiles). Each weight function specifies a series ofweights (valued between zero and one), each corresponding to a pixelwith the same X-coordinate value. For example, weight function 612 has afirst weight 613 corresponding to pixel 611, and weight function 632 hasa second weight 633 also corresponding to pixel 611.

Based on weight function profiles, several regions may be derived toassociate with each tile (e.g., tile 610). Depending on the location ofa pixel with respect to a weight function, the pixel may fall indifferent regions. For example, if a pixel is updated based on onlyresults from tile 610, the pixel falls in a core region 614 (i.e., whereweight function 612 equals one). Instead, if a pixel (e.g., pixel 611)is updated based on a weighted combination of pixel values from multiplecontributing tiles including tile 610 and neighboring tiles, the pixelfalls in a transition region 616 (i.e., where weight function 612greater than zero but less than one). A rectangular area including bothcore region 614 and transition region 616 constitutes tile 610, since itrepresents a region for which tile 610's worker machine is responsiblein terms of pixel updating. Otherwise, if a pixel is not to be updatedby tile 610 (but its value is needed to accurately simulate other pixelsin transition region 616 or core region 614), the pixel falls in a haloregion 618 (i.e., where weight function 612 equals zero). Values ofpixels located in halo region 618 are not transmitted to neighboringtiles (alternatively, values of pixels located in halo region 618 may betransmitted to neighboring titles but such values are to be given aweight of zero by the neighboring tiles). An overall rectangular areaincluding, from inside out, core region 614, transition region 616, andhalo region 618 constitutes a simulation box 619 (sometimes referred toas a bounding box, a marker, or a frame). In some embodiments,simulation box 619 is the job unit assigned to a worker machine sincesimulation box 619 contains all intrinsic pixel values the workermachine needs to have in order to process its respective portion of theIC design layout. In this sense, the concept of tile 610 may be capturedequivalently by simulation box 619. For example, when a rectangularsimulation box 619 is assigned to a worker machine by a manager machine,the manager machine may simply define or identify simulation box 619 bythe coordinates of its four corners. Weight function 612 would specifythe rest of regions associated with simulation box 619.

In order to generate consistent simulation results for overlappingregions, the sum of the weights—each with a value greater than zero butless than one—associated to each contributing tile for the same pixelequals about one (e.g., 1, 1.01, 1.001, 1.0005, 0.99, 0.999, 0.9995,etc.) Note that the weights may add up to a different number and thenrescaled to about one. This may be referred to as “partition of unity.”Therefore, a weight function may be associated with each tile (e.g.,tile 610) so that W_(i)=0 outside its transition region (e.g.,transition region 616), =1 inside its core region, and ΣW_(i)(x, y)=1inside its transition region.

In some embodiments, a weighted combination for a pixel located atcoordinates (x, y) may be computed using equation:

${{P_{update}\left( {x,y} \right)} = {\sum\limits_{i = 1}^{k}{{W_{i}\left( {x,y} \right)}{P_{i}\left( {x,y} \right)}}}},$

where P_(update)(x, y) denotes an updated pixel value of the pixel basedon a weighted combination;P_(i)(x, y) denotes a previous pixel value of the pixel generated bycontributing tile i;W_(i)(x, y) denotes a weight of the pixel according to weight functionandk denotes a number of contributing tiles (including the current tile andneighboring tiles) whose transition regions cover the pixel at (x, y).

FIG. 7 is a schematic diagram illustrating how transition regions ofneighboring tiles overlap. Depending on where a pixel is located, thepixel may be covered by a different number of transition regions. Forexample, pixel 611 is covered by transition regions 616 and 636 of twoneighboring tiles (i.e., tiles 610 and 630), respectively. Therefore,weights 613 and 633—which are to be multiplied by values of pixel611—add up to about one. As shown in FIG. 6, weight 613 is about 0.9,and weight 633 is about 0.1. However, another pixel 617 located near acorner of transition region 616 is covered by four neighboring tiles.Therefore, four weights—which are to be multiplied by values of pixel617—add up to one. Note that, since tiles may be flexibly partitionedherein (see FIGS. 5A-5C), a pixel may be covered by any suitable numberof transition regions. Consequently, a pixel may be updated based on aweighted combination of any suitable number of pixel values fromcontributing tiles.

Note that, in FIG. 6 and FIG. 7, the tiles (or simulation boxes) andtheir associated regions may have any suitable sizes. For example,simulation box 619 may have a size of about 3×3 μm{circumflex over( )}2, 5×10 μm{circumflex over ( )}2, 10×10 μm{circumflex over ( )}2,10×25 μm{circumflex over ( )}2, 50×50 μm{circumflex over ( )}2, etc. Insuch cases, simulation box 619 would have in the X-direction asimulation box width of about 3 μm, 5 μm, 10 μm, 50 μm, etc. A halodistance—between boundaries of tile 610 and simulation box 619—may beset to any suitable value (e.g., 0.3 μm, 1 μm, 2 μm, etc.). The rest ofregion sizes may be determined by corresponding weight functions, whichmay be designed using any suitable means. For example, in theX-direction, the width of core region 614 and the width of tile 610 areboth determined by weight function 612. A transition distance separatescore region 614 and tile 610. The transition distance defines theoverlapping distance between tiles 610 and 630. In some embodiments, themiddle-point of one side of the transition region 616 may be defined asthe point where weight functions 612 and 632 intersect. As shown in FIG.6, weight functions 612 and 632 intersect where their weights are bothvalued at 0.5. Note that the values of weight functions 612 and 632 maybe adjusted depending on how many weight functions overlap at a certainpoint. The profile of weight function 612 over the transit distance mayor may not be symmetrical about both sides of core region 614. As aspecific example, in terms of size in the X-direction, core region 614may have a width of about 29 μm; tile 610 may have a width of about 35μm, including a transit distance of about 3 μm on either side of coreregion 614; and simulation box 619 may have a width of about 37 μm,including a halo distance of about 1 μm on either side of tile 610.

The synchronized parallel tile computation techniques disclosed hereinmay intrinsically remove tile boundary inconsistencies. For example,suppose manager machine 310 assigns first and second simulation boxes toworker machines 320 and 330 for performing simulated imaging process430. The first and second simulation boxes—associated with tiles 610 and630, respectively—overlap in a region that includes a pixel or pointwith a set of coordinates (e.g., transition regions 616 and 636 bothinclude pixel 611 at coordinates (x, y)). In some embodiments, in afirst imaging step (e.g., step 432), worker machine 320 may compute afirst image value (A) of pixel 611, and worker machine 330 may compute asecond image value (B) of pixel 611. Further, in the first imaging step,worker machines 320 and 330 may exchange image values A and B with eachother. Then, in a second imaging step, worker machine 320 may compute athird image value (C) of pixel 611 based on a weighted combination ofimage values A and B, for example, using equation: C=A*(weight613)+B*(weight 633). Also in the second imaging step, worker machine 330may compute a fourth image value (D) of pixel 611 based on the sameweighted combination of image values A and B, for example, usingequation: D=A*(weight 613)+B*(weight 633). The two equations show thatimage values C and D have equal value. In other words, both workermachines 320 and 330 are able to generate identical image values for thesame pixel in the same imaging step, even though their computations areexecuted separately and independently. Tile boundary inconsistency istherefore removed. In implementations, although image values C and D maynot match perfectly due to various factors (e.g., differences incomputation algorithms or capabilities of worker machines, modelinaccuracies, communication errors, etc.), the potential divergencebetween images values C and D is significantly reduced.

As another advantage, since each tile uses results obtained in aprevious step (but not current step), tile ordering becomes irrelevantto boundary stitching treatment. For example, tiles 610 and 630 may beprocessed in either order in the same imaging step without impacting theresults of the final output. That said, the synchronization techniquesdisclosed herein can also be run on one CPU, with one tile simulatedafter another. In such a case, tiles may still be symmetrically combinedso that the tile order does not impact the final output.

FIG. 8 is a schematic diagram illustrating part of a synchronizedparallel tile computation scheme 800, which may be used in simulatedimaging process 430. In tiling step 810, a manager machine receives andpartitions an IC design layout 812 into a plurality of tiles including814 and 816. In imaging step 820 (e.g., same as imaging step 434), tilesare simulated or updated. For example, tiles 814 and 816 are transformedinto tiles 824 and 826, respectively, by updating image values containedtherein (but coordinates of the tiles remain the same). For example, amask image or near field may be transformed to an optical image. Asdescribed above, simulation of tiles involves using weightedcombinations of previous simulation results generated by differenttiles. Moreover, imaging step 820 includes synchronization process 822to synchronize image values from the plurality of tiles via dataexchange between neighboring tiles. Specifically, pixel values locatedin overlapping regions of neighboring tiles are exchanged to synchronizesimulation results from such neighboring tiles. During computationallithography, changes in pixel values are converted to displacementvalues to reflect edge movement of associated geometries or shapes. As aresult, a full modified IC design layout 830 may be stitched togetherfrom all tiles. For example, modified IC design layout 830 may representan optical image. Modified IC design layout 830 may be stored in amanager machine and used for the next imaging step (or the nextiteration of simulated imaging process 430). Alternatively, due to thenature of distributed processing by multiple worker machines, modifiedIC design layout 830 may not be physically stored in the memory of asingle CPU or single device, but rather may be distributed among manyworker machines with synchronized images (i.e. identical data inoverlapped regions with no tile boundary issues). Therefore, whether ornot stored in multiple machines, modified IC design layout 830 iseffectively a synchronized image (e.g., a virtual synchronized image).

In scheme 800, imaging step 820 may be repeated in each followingimaging step until modified IC design layout 830 satisfies design rules.In that sense, data is continuously exchanged between tiles andstitched. For example, during standard forward imaging or verification,each forward image may be synchronized, and then CD may be measured atappropriate gauges. In some embodiments, optical images aresynchronized, and then various resist images (such as gradient,quenching, etc.) are also synchronized. During OPC, an initial mask, theJacobian, and edge movements may be synchronized at each stage. DuringILT, an initial mask, wafer image, and the gradient may be synchronizedat each stage. When modified IC design layout 830 satisfies designrules, final synchronized image values may be combined or stitchedtogether from the plurality of tiles by the manager machine. The finalmodified IC design layout may then be used for mask fabrication.

FIG. 9 is a flowchart of a computational lithography method 900according to various embodiments of the present disclosure.Computational lithography method 900 may be implemented by ICmanufacturing system 10 of FIG. 1, where design house 15, mask house 20,and/or IC manufacturer 25 can perform (or collaborate to perform)computational lithography method 900 to manufacture IC device 30. Forexample, lithography method 900 may modify an IC design layout usingsynchronized parallel processing by a manger machine (e.g., mangermachine 310) and multiple worker machines (e.g., worker machines 320 and330), as described above. FIG. 9 has been simplified for the sake ofclarity. It is understood that additional steps can be provided before,during, and after the method 900 and that some of the steps describedcan be replaced or eliminated for other embodiments of the method 900.Unless otherwise noted, the processes of the method 900 may be performedin any order including concurrently.

In step 910, the manager machine receives an IC design layout. In step920, the manager machine partitions the IC design layout into aplurality of tiles. The manager machine may further assign the pluralityof tiles to the worker machines for simulation. In step 930, the workermachines perform a simulated imaging process (e.g., simulated imagingprocess 430) on the plurality of tiles. Pre-processing may be donebefore the simulated imaging process. Performing the simulated imagingprocess comprises executing a plurality of imaging steps (e.g., imagingsteps 434 and 436) on each of the plurality of tiles. Further, executingeach of the plurality of imaging steps comprises synchronizing imagevalues from the plurality of tiles via data exchange between neighboringtiles. In some embodiments, the simulated imaging process is aniterative process used in OPC or ILT, and each iteration of theiterative process includes the plurality of imaging steps. Methodfurther comprises repeatedly performing the iterative process until themodified IC design layout satisfies pre-set design rules.

In some embodiments, the neighboring tiles include a first tile (e.g.,tile 610) and a second tile (e.g., tile 630) that neighbors the firsttile. The first tile is associated with a first transition region (e.g.,transition region 616), and the second tile is associated with a secondtransition region (e.g., transition region 636). An overlapping area ofthe first transition region and the second transition region includes apixel (e.g., pixel 611). The pixel has a first image value previouslycomputed by the first tile and a second image value previously computedby the second tile. Executing an imaging step on the first tilecomprises computing an updated image value of the pixel based on aweighted combination (using weights 613 and 633) of the first imagevalue of the pixel and the second image value of the pixel. The dataexchange between the neighboring tiles in the imaging step comprisesdelivering the updated image value of the pixel from the first tile tothe second tile. In some embodiments, the weighted combination includesa first weight (e.g., weight 613) multiplied by the first image valueand a second weight (e.g., weight 633) multiplied by the second imagevalue. A sum of the first weight and the second weight is greater thanzero but equal to or less than one.

In some embodiments, the imaging step executed on the first tile is afirst imaging step (e.g., step 434), and the plurality of imaging stepsfurther includes a second imaging step that follows the first imagingstep. Here, executing the second imaging step on the second tilecomprises computing a second updated image value of the pixel based onthe weighted combination of (a) the updated image value of the pixeldelivered to the second tile and (b) a third image value of the pixelcomputed by the second tile in the first imaging step.

Method 900 is intended to solve IC fabrication issues. In step 940, themanager machine generates a modified IC design layout by combining finalsynchronized image values from the plurality of tiles. In step 950, themanager machine provides the modified IC design layout for fabricating amask.

FIG. 10 is a flowchart of a computational lithography method 1000according to various embodiments of the present disclosure.Computational lithography method 1000 may be implemented by ICmanufacturing system 10 of FIG. 1. For example, lithography method 1000may be implemented by a worker machine (e.g., worker machine 320 or 330)to modify a portion of an IC design layout. FIG. 10 has been simplifiedfor the sake of clarity. It is understood that additional steps can beprovided before, during, and after the method 1000 and that some of thesteps described can be replaced or eliminated for other embodiments ofthe method 1000. Unless otherwise noted, the processes of the method1000 may be performed in any order including concurrently.

In step 1010, a first worker machine receives a simulation box of an ICdesign layout (e.g., simulation box 619). The simulation box includes afirst transition region (e.g., transition region 616). The firsttransition region covers a pixel (e.g., pixel 611), which is alsocovered by one or more second transition regions processed by one ormore second worker machines. In step 1020, the first worker machinecomputes a first pixel value of the pixel to simulate a first stage of alithography process. The lithography process involves various stages orsteps such as mask fabrication, radiation projection, resist exposure,post-exposure etching, and metal line formation. Different images areformed in the various stages of the lithography process, such as a maskimage, an optical image, and a photoresist or resist image. In step1030, the first worker machine receives one or more second pixel valuesthat have been computed for the pixel by one or more second workermachines interacting with the first worker machine. The one or moresecond worker machines may have computed the second pixel values also tosimulate the first stage of the lithography process. In step 1040, thefirst worker machine computes an updated pixel value of the pixel tosimulate a second stage of the lithography process based on a weightedcombination of the first pixel value and the one or more second pixelvalues. In some embodiments (e.g., for OPC), the first updated pixelvalue of the pixel may represent an optical image value at the pixel,and the second updated pixel value of the pixel may represent a resistimage value at the pixel. In other embodiments (e.g., for ILT), thefirst updated pixel value of the pixel may represent a wafer image valueat the pixel, and wherein the second updated pixel value of the pixelmay represent a gradient value at the pixel. In step 1050, the firstworker machine transmits the updated pixel value of the pixel to each ofthe one or more second worker machines.

As described above, the parallel computing architecture disclosed hereintreats a large IC design layout as a whole. Although an underlyingtiling scheme is still used, simulation results are combined smoothlyand symmetrically from each tile into a single larger simulation domain.Since a simulated imaging process has multiple steps that produceintermediate results, the disclosed computing architecture stages thecomputation in such a manner that the intermediate results can besynchronized before simulation proceeds to the next step, therebyeffectively eliminating tile boundary inconsistencies at each step.Functionally, such synchronization is equivalent to performing thesimulated imaging process on the single, larger area of IC designlayout. Therefore, the present disclosure provides an effective andefficient solution to lithography simulation for a large area of masklayout. Such a solution can be used for lithography simulation andcomputation where an iterative solver (e.g., OPC and ILT) is used in aparallel computing environment.

The parallel computing architecture disclosed herein may achieveappreciable gain in simulation efficiency. As a first example, in a flatIC design layout without meaningful pattern repetitions, assume eachtile is included in a 32×32 μm{circumflex over ( )}2 simulation domain.Assume a halo distance of about 1 μm based purely on modelconsiderations. Using techniques disclosed herein, a total transitdistance may be about or less than 3 μm. It is estimated that, in an OPCsimulation, the reduction in transit distance (from 6 μm to 3 μm)compared to other approaches may result in an efficiency gain of about24%. As a second example, assume each tile is included in a 16×16μm{circumflex over ( )}2 simulation domain, and assume a halo distanceof about 0.3 μm based purely on model considerations. It is estimatedthat, in an OPC simulation, the reduction in transit distance (from 1.5μm to 0.3 μm) compared to other approaches may result in an efficiencygain of about 10%. The use of smaller halos (e.g., size is only limitedby model considerations) also improves efficiency of large areasimulation.

The efficiency gain achieved herein may be especially helpful forcertain tiling schemes. For example, in a staggered tiling scheme (e.g.,staggered tiling scheme 550) which is useful for hotspot fixing,non-rectangular regions (tiles or simulation boxes) may be simulatedefficiently with minimal tiles. Efficiency gain in this case can beenormous, especially for complicated hotspot areas. Additionally,continuous hotspot areas may be handled simultaneously by multipleworker machines without requiring any freezing of features. In general,the tile synchronization techniques disclosed have benefits regardlessof the tiling scheme. By freezing features (e.g., in full-chip OPC), thesystem is restricted in terms of its degrees of freedom to optimize amask. The present disclosure places limited if any restrictions (e.g.,no such restrictions in cases such as hotspot fixing), thereby resultingin better convergence of computation results, particularly near tileboundaries. In addition, the synchronization techniques disclosed hereinmay be selectively incorporated into existing frameworks, e.g., byimplementing them on larger tiles. The disclosed tiling schemes may becombined with conventional schemes to gain efficiency if simultaneouslytreating an entire design layout may be prohibitive on availablecomputational resources. While such a partial implementation may noteliminate boundary stitching issues, it does reduce its frequency ofoccurrence.

Thus, the present disclosure provides examples of synchronized paralleltile computation methods for IC fabrication. In some examples, a methodcomprises receiving an IC design layout, partitioning the IC designlayout into a plurality of tiles, performing a simulated imaging processon the plurality of tiles, wherein performing the simulated imagingprocess comprises executing a plurality of imaging steps on each of theplurality of tiles, wherein executing each of the plurality of imagingsteps comprises synchronizing image values from the plurality of tilesvia data exchange between neighboring tiles. The method furthercomprises generating a modified IC design layout by combining finalsynchronized image values from the plurality of tiles, and providing themodified IC design layout for fabricating a mask.

In some such examples, the neighboring tiles include a first tile and asecond tile that neighbors the first tile. An overlapping area of thefirst tile and the second tile includes a pixel, and the pixel has afirst image value previously computed by the first tile and a secondimage value previously computed by the second tile. Executing an imagingstep on the first tile comprises computing an updated image value of thepixel based on a weighted combination of the first image value of thepixel and the second image value of the pixel. The data exchange betweenthe neighboring tiles in the imaging step comprises delivering theupdated image value of the pixel from the first tile to the second tile.In some such examples, the weighted combination includes a first weightmultiplied by the first image value and a second weight multiplied bythe second image value, and a sum of the first weight and the secondweight is greater than zero but equal to or less than one. In some suchexamples, the imaging step executed on the first tile is a first imagingstep, and the plurality of imaging steps further includes a secondimaging step that follows the first imaging step. Here executing thesecond imaging step on the second tile comprises computing a secondupdated image value of the pixel based on the weighted combination of(a) the updated image value of the pixel delivered to the second tileand (b) a third image value of the pixel computed by the second tile inthe first imaging step. In some such examples, the simulated imagingprocess is an iterative process used in OPC or ILT, and each iterationof the iterative process includes the plurality of imaging steps. Herethe method further comprises repeatedly performing the iterative processuntil the modified IC design layout satisfies pre-set conditions.

In further examples, a system comprises a manager machine interactingwith a plurality of worker machines including first and second workermachines interacting with the manager machine. The manager machine isconfigured to receive an IC design layout, partition the IC designlayout into a plurality of simulation boxes including first and secondsimulation boxes, assign the first and second simulation boxes to thefirst and second worker machines, respectively, for performing asimulated imaging process including first and second imaging steps. Herean overlapping region of the first and second simulation boxes includesa point with a set of coordinates. The first and second worker machinesare configured to: in the first imaging step, compute image value A ofthe point using the first worker machine and image value B of the pointusing the second worker machine; in the first imaging step, exchangeimage value A and image value B with each other; and in the secondimaging step, compute image value C of the point using the first workermachine and image value D of the point using the second worker machine.The computation of both image value C and image value D is based on aweighted combination of image value A and image value B.

In some such examples, the weighted combination of image value A andimage value B uses a first weight multiplied by image value A and asecond weight multiplied by image value B, and wherein a sum of thefirst and second weights equals one. In some such examples, image valueC of the point computed using the first worker machine and image value Dof the point computed using the second worker machine are equal. In somesuch examples, the first and second worker machines are furtherconfigured to send image value C of the point and image value D of thepoint to the manager machine. In some such examples, the manager machineis further configured to generate a modified IC design layout based inpart on image value C of the point and image value D of the point, andprovide the modified IC design layout for fabricating a lithography maskbased on the modified IC design layout.

In further examples, a method for lithography simulation comprisesreceiving a simulation box of an IC design layout by a first workermachine. The simulation box includes a first transition region, thefirst transition region covers a pixel, and the pixel is also covered byone or more second transition regions processed by one or more secondworker machines. The method further comprises computing a first pixelvalue of the pixel to simulate a first stage of a lithography process,receiving one or more second pixel values that have been computed forthe pixel by the one or more second worker machines interacting with thefirst worker machine, and computing an updated pixel value of the pixelto simulate a second stage of the lithography process based on aweighted combination of the first pixel value and the one or more secondpixel values.

In some such examples, the weighted combination uses a plurality ofweights, each multiplied by one of the first pixel value and the one ormore second pixel values in computing the updated pixel value. Here asum of the plurality of weights equals one. In some such examples, themethod further comprises transmitting the updated pixel value of thepixel to each of the one or more second worker machines. In some suchexamples, the method further comprises receiving the IC design layout bya manager machine interacting with the first worker machine and with theone or more second worker machines, partitioning, by the managermachine, the IC design layout into a plurality of simulation boxesincluding the simulation box, assigning by the manager machine thesimulation box to the first worker machine for simulation, and sending,from the manager machine to the first worker machine, message deliveryinstructions that specify how the updated pixel value of the pixel is tobe transmitted to each of the one or more second worker machines. Insome such examples, the updated pixel value of the pixel is a firstupdated pixel value that is computed by the first worker machine in afirst imaging step. The method further comprises, in a second imagingstep that follows the first imaging step: receiving one or more thirdpixel values that have been generated for the pixel in the first imagingstep by the one or more second worker machines, and computing a secondupdated pixel value of the pixel based on a weighted combination of thefirst updated pixel value and the one or more third pixel values. Insome such examples, the first imaging step and the second imaging stepare used for OPC, where the first updated pixel value of the pixelrepresents an optical image value at the pixel, and where the secondupdated pixel value of the pixel represents a resist image value at thepixel. In some such examples, the first imaging step and the secondimaging step are used for ILT, where the first updated pixel value ofthe pixel represents a wafer image value at the pixel, and where thesecond updated pixel value of the pixel represents a gradient value atthe pixel. In some such examples, the method further comprisesgenerating a modified IC design layout based in part on the secondupdated pixel value, and providing the modified IC design layout forfabricating a lithography mask based on the modified IC design layout.In some such examples, the weighted combination of the first pixel valueand the one or more second pixel values is specified by one or moreweighting functions, wherein each weighting function accords (a) aweight of one to an core region of the simulation box, (b) weightsbetween zero and one to the transition region, and (c) a weight of zeroto a halo region of the simulation box. In some such examples, thesimulation box further includes a core region surrounded by thetransition region and a halo region surrounding the transition region.Here the method further comprises computing updated pixel values of aplurality of pixels in the core region by using only pixel values thathave been generated for the plurality of pixels by the first workermachine, while not using any previous pixel values generated for theplurality of pixels by the one or more second worker machines. Computingthe updated pixel value of the pixel is further based on additionalpixels located in the halo region. Values of the additional pixelslocated in the halo region are not transmitted by the first workermachine to any of the one or more second worker machines.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand the aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of theembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

What is claimed is:
 1. A method for integrated circuit (IC) fabrication,the method comprising: receiving an IC design layout; partitioning theIC design layout into a plurality of tiles; performing a simulatedimaging process on the plurality of tiles, wherein performing thesimulated imaging process comprises executing a plurality of imagingsteps on each of the plurality of tiles, wherein executing each of theplurality of imaging steps comprises synchronizing image values from theplurality of tiles via data exchange between neighboring tiles;generating a modified IC design layout by combining final synchronizedimage values from the plurality of tiles; and providing the modified ICdesign layout for fabricating a mask.
 2. The method of claim 1, whereinthe neighboring tiles include a first tile and a second tile thatneighbors the first tile, wherein an overlapping area of the first tileand the second tile includes a pixel, wherein the pixel has a firstimage value previously computed by the first tile and a second imagevalue previously computed by the second tile, wherein the executing ofan imaging step on the first tile comprises computing an updated imagevalue of the pixel on the first tile based on a weighted combination ofthe first image value of the pixel and the second image value of thepixel, and wherein the data exchange between the neighboring tiles inthe imaging step comprises delivering the updated image value of thepixel from the first tile to the second tile.
 3. The method of claim 2,wherein the weighted combination includes a first weight multiplied bythe first image value and a second weight multiplied by the second imagevalue, and wherein a sum of the first weight and the second weight isgreater than zero but equal to or less than one.
 4. The method of claim3, wherein the executing of the plurality of imaging steps on the pixelincludes executing each of the plurality of imaging steps on the pixelusing the same first weight and the same second weight.
 5. The method ofclaim 2, wherein the first image value is previously computed byapplying a lithography processing model by the first tile, and thesecond image value is previously computed by applying the lithographyprocessing model by the second tile.
 6. The method of claim 2, whereinthe imaging step executed on the first tile is a first imaging step, andthe plurality of imaging steps further includes a second imaging stepthat follows the first imaging step, wherein executing of the secondimaging step on the second tile comprises computing a second updatedimage value of the pixel based on the weighted combination of (a) theupdated image value of the pixel delivered to the second tile and (b) athird image value of the pixel computed by the second tile in the firstimaging step.
 7. The method of claim 2, wherein the combining of thefinal synchronized image values includes, after the executing of a lastimaging step of the plurality of imaging steps, combining a weightedcombination of a final updated image value for the pixel computed on thefirst tile and a final updated image value for the pixel computed on thesecond tile with a final synchronized image value of another pixel ofthe overlapping area.
 8. The method of claim 1, wherein the simulatedimaging process is an iterative process used in optical proximitycorrection (OPC) or inverse lithography technology (ILT), and eachiteration of the iterative process includes the plurality of imagingsteps, the method further comprising repeatedly performing the iterativeprocess until the modified IC design layout satisfies pre-setconditions.
 9. The method of claim 1, wherein the partitioning,generating, and providing includes partitioning, generating andproviding by a manager machine, and the performing includes performingby worker machines, the worker machines being different from the managermachine.
 10. A method for integrated circuit (IC) fabrication, themethod comprising: receiving an IC design layout; partitioning the ICdesign layout into a plurality of tiles; synchronizing image values of afirst pixel at a first imaging step between two tiles of the pluralityof tiles to obtain a first synchronized image value of the first pixel,the first pixel in an overlapped region between the two tiles; computingimage values of the first pixel at a second imaging step based on thefirst synchronized image value of the first pixel by the two tiles;synchronizing the images values of the first pixel at the second imagingstep between the two tiles to obtain a second synchronized image valueof the first pixel; generating a modified IC design layout by combiningthe second synchronized image value of the first pixel with a thirdsynchronized image value of a second pixel of the plurality of tiles;and providing the modified IC design layout for fabricating a mask. 11.The method of claim 10, wherein the synchronizing of the image values ofthe first pixel at the first imaging step includes: sending a firstimage value of the first pixel at the first imaging step by a first tileof the two tiles to a second tile of the two tiles, and receiving asecond image value of the first pixel at the first imaging step by thefirst tile from the second tile; computing a first weighted combinationof the first image value of the first pixel at the first imaging stepand the second image value of the first pixel at the first imaging stepto obtain the first synchronized image value of the first pixel; andwherein the synchronizing of the image values of the first pixel at thesecond imaging step includes: sending a first image value of the firstpixel at the second imaging step by the first tile to the second tile,and receiving a second image value of the first pixel at the firstimaging step by the first tile from the second tile; and computing asecond weighted combination of the first image value of the first pixelat the second imaging step and the second image value of the first pixelat the second imaging step to obtain the second synchronized image valueof the first pixel.
 12. The method of claim 11, wherein the computing ofthe first weighted combination includes multiplying the first imagevalue of the first pixel at the first imaging step by a first weight,and multiplying the second image value of the first pixel at the firstimaging step by a second weight, wherein the computing of the secondweighted combination includes multiplying the first image value of thefirst pixel at the second imaging step by the first weight, andmultiplying the second image value of the first pixel at the secondimaging step by the second weight, and wherein a sum of the first weightand the second weight is greater than zero but equal to or less thanone.
 13. The method of claim 10, wherein the computing of the imagevalues of the first pixel at the second imaging step includes applying alithography processing model to the first synchronized image value ofthe first pixel at the two tiles.
 14. The method of claim 10, furthercomprising computing a first image value of a third pixel by a firsttile of the two tiles but not by a second tile of the two tiles, thethird pixel being in the first tile but outside the overlapped region.15. The method of claim 14, wherein the computing of the image values ofthe first pixel at the second imaging step includes applying alithography processing model to the first synchronized image value ofthe first pixel by the two tiles, the method further comprisingcomputing a second image value of the third pixel by applying thelithography processing model to the first image value of the third pixelby the first tile.
 16. The method of claim 15, wherein the second pixelis outside the first tile and outside the second tile, and wherein thegenerating of the modified IC design layout includes combining thesecond synchronized image value of the first pixel with the thirdsynchronized image value of the second pixel, and with the second imagevalue of the third pixel.
 17. A method for integrated circuit (IC)fabrication, the method comprising: receiving an IC design layout;partitioning the IC design layout into a plurality of tiles;synchronizing image values from the plurality of tiles; generating amodified IC design layout by combining final synchronized image values;and providing the modified IC design layout for fabricating a mask. 18.The method of claim 17, wherein the synchronizing provides a firstsynchronized image value of a pixel in an overlapped region between afirst tile of the plurality of tiles and a second tile of the pluralityof tiles, the method further comprising: simulating a first imagingprocess on the first tile based on the first synchronized image value toobtain a first updated image value; simulating the first imaging processon the second tile based on the first synchronized image value to obtaina second updated image value; and synchronizing the first updated imagevalue and the second updated image value to obtain a second synchronizedimage value, wherein the combining of the final synchronized imagevalues includes combining the second synchronized image value.
 19. Themethod of claim 17, wherein the synchronizing includes: exchanging theimage values between a first tile of the plurality of tiles and a secondtile of the plurality of tiles that neighbors the first tile, wherein anoverlapping area of the first tile and the second tile includes a pixel,wherein the pixel has a first image value of the image values previouslycomputed by the first tile and a second image value of the image valuespreviously computed by the second tile, computing an updated image valueof the pixel on the first tile based on a weighted combination of thefirst image value of the pixel and the second image value of the pixel,and delivering the updated image value of the pixel from the first tileto the second tile.
 20. The method of claim 19, wherein the weightedcombination includes a first weight multiplied by the first image valueand a second weight multiplied by the second image value, and wherein asum of the first weight and the second weight is greater than zero butequal to or less than one. wherein the synchronizing is a firstsynchronizing on the pixel, the method further comprising a secondsynchronizing on the pixel, the second synchronizing includes computingbased on the first weight and the second weight.